2SA1012O 查看數據表（PDF） - SavantIC Semiconductor
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2SA1012O Datasheet PDF : 5 Pages
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SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1012
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA , IB=0
VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.15A
VBEsat
Base-emitter saturation voltage
IC=-3A; IB=-0.15A
ICBO
IEBO
hFE –1
hFE -2
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
VCB=-50V; IE=0
VEB=-5V; IC=0
IC=-1A ; VCE=-1V
IC=-3A ; VCE=-1V
fT
Transition frequency
IC=-1A ; VCE=-4V
Cob
Output capacitance
Switching times
f=1MHz ; VCB=10V
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-3A ;IB1=- IB2=-0.15A
RL=10A,VCC=30V
MIN TYP. MAX UNIT
-50
V
-0.4
V
-1.2
V
-1
µA
-1
µA
70
240
30
60
MHz
170
pF
0.1
µs
1.0
µs
0.1
µs
hFE-1 Classifications
O
Y
70-140
120-240
2
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