2N4400 2N4401
10
IC = 1.0 mA, RS = 150 Ω
8.0
IC = 500 µA, RS = 200 Ω
IC = 100 µA, RS = 2.0 kΩ
IC = 50 µA, RS = 4.0 kΩ
6.0
4.0
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
Bandwidth = 1.0 Hz
10
f = 1.0 kHz
RS = OPTIMUM
8.0
RS = SOURCE
IC = 50 µA
RS = RESISTANCE
IC = 100 µA
6.0
IC = 500 µA
IC = 1.0 mA
4.0
2.0
2.0
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0
f, FREQUENCY (kHz)
10 20
50 100
0
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
RS, SOURCE RESISTANCE (OHMS)
Figure 9. Frequency Effects
Figure 10. Source Resistance Effects
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between
selected from both the 2N4400 and 2N4401 lines, and the
hfe and other “h” parameters for this series of transistors. To
obtain these curves, a high–gain and a low–gain unit were
same units were used to develop the correspondingly num-
bered curves on each graph.
300
50 k
2N4401 UNIT 1
200
2N4401 UNIT 2
20 k
2N4400 UNIT 1
2N4400 UNIT 2
10 k
100
5.0 k
70
50
2N4401 UNIT 1
2N4401 UNIT 2
2.0 k
2N4400 UNIT 1
30
2N4400 UNIT 2
1.0 k
20
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 11. Current Gain
500
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
Figure 12. Input Impedance
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 13. Voltage Feedback Ratio
100
50
20
10
5.0
2.0
1.0
0.1
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 14. Output Admittance
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data