MMBT2907A(2006) 查看數據表（PDF） - Diotec Semiconductor Germany
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MMBT2907A Datasheet PDF : 2 Pages
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MMBT2907 / MMBT2907A
Characteristics (Tj = 25°C)
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)
- IC = 150 mA, - IB = 15 mA
- IC = 500 mA, - IB = 50 mA
Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)
- VCEsat
- VCEsat
- IC = 150 mA, - IB = 15 mA
- VBEsat
- VBEsat
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- VCB = 50 V, (E open)
MMBT2907
MMBT2907A
- ICBO
- ICBO
- VCB = 50 V, Tj = 125°C, (E open)
- ICBO
Gain-Bandwidth Product – Transitfrequenz
- VCE = 20 V, - IC = 50 mA, f = 100 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz
CCBO
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 2 V, IC = ic = 0, f = 1 MHz
CEBO
Switching times – Schaltzeiten (between 10% and 90% levels)
turn on
delay time
rise time
ton
- VCC = 30 V, - VBE = 1.5 V
- IC = 150 mA, - IB1 = 15mA
td
tr
turn off
storage time
fall time
toff
- VCC = 30 V, - IC = 150 mA,
- IB1 = - IB2 = 15 mA
ts
tf
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Marking - Stempelung
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
–
–
0.4 V
–
–
1.6 V
–
–
1.3 V
–
–
2.6 V
–
–
20 nA
–
–
10 nA
–
–
20 µA
200 MHz
–
–
–
–
8 pF
–
–
30 pf
–
–
45 ns
–
–
10 ns
–
–
40 ns
–
–
100 ns
–
–
80 ns
–
–
30 ns
< 420 K/W 1)
MMBT2222 / MMBT2222A
MMBT2907 = 2B
MMBT2907A = 2F
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
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