MJF18004 查看數據表（PDF） - Inchange Semiconductor
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MJF18004 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
MJF18004
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS)
VCEsat-1
VCEsat-2
VCEsat-3
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
IC=0.1A; L=25mH
IC=1A ;IB=0.1A
TC=125℃
IC=2A ;IB=0.4A
TC=125℃
IC=2.5A ;IB=0.5A
450
V
0.5
0.6
V
0.45
0.8
V
0.75
V
VBEsat-1 Base-emitter saturation voltage
IC=1A ;IB=0.1A
1.1
V
VBEsat-2 Base-emitter saturation voltage
IC=2A ;IB=0.4A
1.25
V
VBEsat-3 Base-emitter saturation voltage
IC=2.5A ;IB=0.5A
1.3
V
0.1
VCES=RatedVCES;
ICES
Collector cut-off current
VEB=0
0.5
mA
固IN电C半H导AN体GE SEMICONDUCTOR ICEO
IEBO
hFE-1
hFE-2
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
VCES=800V
TC=125℃
VCE=RatedVCEO; IB=0
VEB=9V; IC=0
IC=1A ; VCE=2.5V
12
IC=1A ; VCE=5V
14
0.1
0.1
mA
0.1
mA
36
hFE-3
DC current gain
IC=2A ; VCE=1V
6
hFE-4
DC current gain
IC=5mA ; VCE=5V
10
fT
Transition frequency
IC=0.5A ; VCE=10V;f=1.0MHz
13
MHz
COB
Collector outoput capacitance
IE=0 ; VCB=10V;f=1.0MHz
Switching times resistive load,Duty Cycle≤10%,Pulse Width=20μs
45
pF
ton
Turn-on time
ts
Storage time
tf
Fall time
VCC=250V ,IC=2.5A
IB1=0.5A; IB2=0.5A
0.6
μs
3.0
μs
0.4
μs
2
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