MJF18004 查看數據表（PDF） - New Jersey Semiconductor
零件编号
产品描述 (功能)
生产厂家
MJF18004 Datasheet PDF : 2 Pages
| |||
u
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MJF18004
DESCRIPTION
• Collector-Base Breakdown Voltage-
:V(BR)CBO=1000V(Min)
• High Switching Speed
APPLICATIONS
• Designed for use in 220V line-operated switchmode power
supplies and electronic light ballasts
*W
! •?''••
123
3
PIN 1.BASE
1 COLLECTOR
3. EMITTER
TO-220F package
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
1000
UNIT
V
B-
_
•?-}'
F .'•", -•--' ,-•,
.,.::':: : '::J
- C-
-s-
_..._ tr.T_77^<
u! < ;
: "' i
-,'.';
JA
VCEO
VEBO
Ic
ICM
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
450
V
g
V
." • "- , -, , • : ; Ht - R -
5
A
:
K
10
A
,..,,;,
:
.
IB
Base Current
2
A
IBM
Base Current-Peak
4
A
PD
Total Power Dissipation@Tc=25°C
40
W
Tj
Junction Temperature
150
°C
Tstg
Storage Temperature
-65~150
"C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Rresistance, Junction to Case
3.12 •c/w
Rth j-a Thermal Resistance, Junction to Ambient 62.5 "C/W
' -D
- N*
j„
mm
DIM MIN
A 1495
B 10.00
C 4.40
D 0.75
F 3.10
MAX
15.05
10.10
4.60
0.80
3.30
H 3.70 3.90
J 0.50 0.70
K 13.4 13.6
L 1.10 1.30
N 5.00 5.20
Q 2.70 2.90
R 2.20 2.40
S 2.65 2.85
U 6.40 6.60
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information Furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets nre current before placing orders.
Quality Semi-Conductors
Share Link: 