2SC5198B-O 查看數據表（PDF） - Nell Semiconductor Co., Ltd
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2SC5198B-O Datasheet PDF : 3 Pages
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SEMICONDUCTOR
Fig.1 Collector output characteristics
10
250
200
150
8
100
Common emitter
TC = 25°C
6
50
40
4
30
2
20
lB = 10 mA
0
0
2
4
6
8
10
Collector-emitter voltage, VCE (V)
Fig.3 IC-VBE characteristics
10
8
6
TC = 100°C
4
TC = 25°C
TC = -25°C
2
Common emitter
VCE = 5V
0
0
0.4
0.8
1.2
1.6
2.0
Base-emitter voltage, VBE (V)
Fig.5 Safe operating area
30
lC max (pulsed)*
lC max (continuous)
10
5
DC operation
TC = 25°C
3
100 ms*
1 ms*
10 ms*
1
0.5
0.3
* Single nonrepetitive
pulse TC = 25°C
Curves must be derated
0.1 linearly with increase in
temperature.
0.05
1
3 5 10
30
VCEO max
100
300
Collector-Emitter voltage, VCE (V)
2SC5198B Series RRooHHSS
Nell High Power Products
Fig.2 Collector-Emitter saturation voltage
10
1
TC = 100°C
0.1
TC = 25°C
TC = -25°C
Common emitter
lC/lB =10
0.01
0.01
0.1
1
10
100
Collector current, lC (A)
1000
Fig.4 DC current gain
100
TC = 100°C
TC = 25°C
TC = -25°C
10
1
0.01
Common emitter
VCE = 5V
0.1
1
10
Collector current, lC (A)
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