2SC3356 查看數據表（PDF） - Inchange Semiconductor
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2SC3356 Datasheet PDF : 5 Pages
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3356
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
ICBO
Collector Cutoff Current
VCB= 10V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 1V; IC= 0
hFE
DC Current Gain
IC= 20mA ; VCE= 10V
fT
Current-Gain—Bandwidth Product IC= 20mA ; VCE= 10V
Cre
Feed-Back Capacitance
︱S21e︱2 Insertion Power Gain
NF
Noise Figure
IE= 0 ; VCB= 10V;f= 1.0MHz
IC= 20mA ; VCE= 10V;f= 1.0GHz
IC= 7mA ; VCE= 10V;f= 1.0GHz
MIN TYP. MAX UNIT
1.0 μA
1.0 μA
50
300
7
GHz
0.55 1.0 pF
11.5
dB
1.1 2.0 dB
hFE Classification
Class
Q
R
S
Marking R23
R24
R25
hFE
50-100 80-160 125-250
isc Website：www.iscsemi.cn
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