2SC1906 查看數據表（PDF） - Hitachi -> Renesas Electronics

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2SC1906

Silicon NPN Epitaxial Planar

Hitachi -> Renesas Electronics 

2SC1906

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Emitter current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

IE

PC

Tj

Tstg

Ratings

Unit

30

V

19

V

2

V

50

mA

–50

mA

300

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Collector to base breakdown V(BR)CBO 30

voltage

Collector to emitter breakdown V(BR)CEO 19

voltage

Emitter to base breakdown

voltage

V(BR)EBO

2

Collector cutoff current

I CBO

—

DC current transfer ratio

hFE

40

Gain bandwidth product

fT

600

Collector output capacitance Cob

—

Collector to emitter saturation VCE(sat)

—

voltage

Base time constant

rbb’ • CC —

Power gain

PG

—

—

Typ Max Unit Test conditions

—

—

V

IC = 10 µA, IE = 0

—

—

V

IC = 3 mA, RBE = ∞

—

—

V

IE = 10 µA, IC = 0

—

0.5

—

—

1000 —

1.0

2.0

0.2

1.0

µA

MHz

pF

V

VCB = 10 V, IE = 0

VCE = 10 V, IC = 10 mA

VCE = 10 V, IC = 10 mA

VCB = 10 V, IE = 0, f = 1 MHz

IC = 20 mA, IB = 4 mA

10

25

ps

VCB = 10 V, IC = 10 mA,

f = 31.8 MHz

33

—

dB

VCE = 10 V, f = 45 MHz

IC = 5 mA

18

—

dB

VCE = 10 V, f = 200 MHz

IC = 5 mA

2

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