MBR30200CT 查看數據表（PDF） - Mospec Semiconductor
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MBR30200CT Datasheet PDF : 2 Pages
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MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Refractory metal capable of high
temperature operation metal. The proprietary barrier technology allows for
reliable operation up to 175℃ junction temperature. Typical application are in
switching Mode Power Supplies such as adaptors, DC/DC converters, free-
wheeling and polarity protection diodes.
Features
＊Low Forward Voltage.
＊Low Switching noise.
＊High Current Capacity
＊Guarantee Reverse Avalanche.
＊Guard-Ring for Stress Protection.
＊Low Power Loss & High efficiency.
＊175℃ Operating Junction Temperature
＊Low Stored Charge Majority Carrier Conduction.
＊Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
＊In compliance with EU RoHs 2002/95/EC directives
MBR30200CT
SCHOTTKY BARRIER
RECTIFIERS
30 AMPERES
200 VOLTS
TO-220AB
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectifier Forward Current ( per diode )
Total Device (Rated VR),TC=125℃
Peak Repetitive Forward Current
(Rate VR, Square Wave, 20kHz)
Non-Repetitive Peak Surge Current (Surge applied at
rate load conditions halfware, single phase, 60Hz)
Operating and Storage Junction Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IF(AV)
IFM
MBR30200CT
200
140
15
30
30
Unit
V
V
A
A
IFSM
250
A
TJ , TSTG
-65 to +175
℃
THERMAL RESISTANCES
Typical Thermal Resistance junction to case ( per device)
Rθjc
3.8
℃/w
ELECTRIAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage ( per diode )
( IF =15 Amp TC = 25℃)
( IF =15 Amp TC = 125℃)
Maximum Instantaneous Reverse Current
( Rated DC Voltage, TC = 25℃)
( Rated DC Voltage, TC = 125℃)
Symbol MBR30200CT Unit
VF
0.95
V
0.85
IR
0.01
mA
10
DIM MILLIMETERS
MIN MAX
A 14.68 15.32
B
9.78 10.42
C
5.02 6.52
D 13.06 14.62
E
3.57 4.07
F
2.42 2.66
G 1.12 1.36
H
0.72 0.96
I
4.22 4.98
J
1.14 1.38
K
2.20 2.98
L
0.33 0.55
M 2.48 2.98
O 3.70 3.90
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