MW7IC930GNR1 查看數據表（PDF） - Freescale Semiconductor

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MW7IC930GNR1

RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor 

Table 1. Maximum Ratings

Rating

Drain--Source Voltage

Gate--Source Voltage

Operating Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature (1,2)

Input Power

Table 2. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

(Case Temperature 80°C, 3.2 W CW)

Stage 1, 28 Vdc, IDQ1 = 106 mA

Stage 2, 28 Vdc, IDQ2 = 285 mA

Symbol

VDSS

VGS

VDD

Tstg

TC

TJ

Pin

Symbol

RθJC

Value

--0.5, +65

--6.0, +10

32, +0

--65 to +150

150

225

20

Value (2,3)

5.5

1.6

Unit

Vdc

Vdc

Vdc

°C

°C

°C

dBm

Unit

°C/W

(Case Temperature 80°C, 30 W CW)

Stage 1, 28 Vdc, IDQ1 = 40 mA

Stage 2, 28 Vdc, IDQ2 = 340 mA

Table 3. ESD Protection Characteristics

Test Methodology

Human Body Model (per JESD22--A114)

Machine Model (per EIA/JESD22--A115)

Charge Device Model (per JESD22--C101)

5.8

1.2

Class

1B (Minimum)

A (Minimum)

II (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Per JESD22--A113, IPC/JEDEC J--STD--020

Rating

Package Peak Temperature

Unit

3

260

°C

Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Stage 1 — Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 65 Vdc, VGS = 0 Vdc)

IDSS

—

—

10

μAdc

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

IDSS

—

—

1

μAdc

Gate--Source Leakage Current

(VGS = 1.5 Vdc, VDS = 0 Vdc)

IGSS

—

—

1

μAdc

Stage 1 — On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 14 μAdc)

VGS(th)

1.2

2

2.7

Vdc

Gate Quiescent Voltage

(VDS = 28 Vdc, IDQ1 = 106 mA)

Fixture Gate Quiescent Voltage (4)

(VDD = 28 Vdc, IDQ1 = 106 mA, Measured in Functional Test)

VGS(Q)

—

VGG(Q)

6.9

2.8

—

Vdc

9.4

11.9

Vdc

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

4. VGG = 3.3 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit

schematic.

(continued)

MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1

2

RF Device Data

Freescale Semiconductor

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