MMBD1505A 查看數據表（PDF） - Diode Semiconductor Korea

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MMBD1505A

High conductance low leakage diode

Diode Semiconductor Korea 

Diode Semiconductor Korea

High conductance low leakage diode

MMBD1501A/1503A/

1504A/1505A

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Reverse Breakdown Voltage

Symbol

V(BR)R1

Min.

200

Max. Unit

V

Test Conditions

IR=5μA

Forward voltage

Reverse current

Diode Capacitance

0.62 0.72

0.72 0.83

0.8

0.89

VF

V

0.83 0.93

0.87 1.1

0.9

1.15

1.0

IR

nA

10

CD

4

pF

IF=1mA

IF=10mA

IF=50mA

IF=100mA

IF=200mA

IF=300mA

VR=125V

VR=180V

VR=0V,f=1MHz

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

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