SISA12ADN 查看數據表（PDF） - Vishay Semiconductors
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SISA12ADN Datasheet PDF : 13 Pages
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New Product
SiSA12ADN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
60
50
40
30
20
10
0
0.0
0.006
VGS = 10 V thru 4 V
VGS = 3 V
0.5
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.005
VGS = 4.5 V
20
16
12
TC = 25 °C
8
TC = 125 °C
4
TC = - 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
2400
Ciss
2000
1600
0.004
0.003
VGS = 10 V
0.002
0
10
20
30
40
50
60
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 10 A
8
VDS = 7.5 V
6
VDS = 15 V
4
VDS = 24 V
2
1200
Coss
800
400
Crss
0
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
ID = 10 A
1.6
1.4
1.2
VGS = 10 V
VGS = 4.5 V
1.0
0.8
0
0
6
12
18
24
30
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 63234
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S13-0113-Rev. A, 21-Jan-13
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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