FQP27P06_SW82127 查看數據表（PDF） - Fairchild Semiconductor
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FQP27P06_SW82127 Datasheet PDF : 10 Pages
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Typical Characteristics
102
Top :
VGS
- 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
101 Bottom : - 4.5 V
100
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
0.24
0.20
0.16
VGS = - 10V
0.12
VGS = - 20V
0.08
0.04
※ Note : TJ = 25℃
0.00
0
10 20 30 40 50 60 70 80 90 100 110 120 130
-ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3000
2500
2000
1500
1000
500
0
10-1
Coss
Ciss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
102
101
175℃
100 25℃
10-1
2
-55℃
※ Notes :
1. VDS = -30V
2. 250μ s Pulse Test
4
6
8
10
-VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
102
101
100
175℃ 25℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
10-1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
-VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
VDS = -30V
8
VDS = -48V
6
4
2
※ Note : ID = -27 A
0
0
5
10
15
20
25
30
35
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
3
FQP27P06 Rev.C0
www.fairchildsemi.com
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