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MPC8541VTALD(2006) 查看數據表(PDF) - Freescale Semiconductor

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MPC8541VTALD Datasheet PDF : 84 Pages
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Power Characteristics
3. Typical power is based on a nominal voltage of VDD = 1.2V, a nominal process, a junction
temperature of Tj = 105° C, and a Dhrystone 2.1 benchmark application.
4. Thermal solutions will likely need to design to a value higher than Typical Power based on the end
application, TA target, and I/O power.
5. Maximum power is based on a nominal voltage of VDD = 1.2V, worst case process, a junction
temperature of Tj = 105° C, and an artificial smoke test.
6. The nominal recommended VDD = 1.3V for this speed grade.
Table 5. Typical I/O Power Dissipation
Interface
DDR I/O
PCI I/O
Local Bus I/O
TSEC I/O
CPM - FCC
Parameters
CCB = 200 MHz
CCB = 266 Mhz
CCB = 300 Mhz
CCB = 333 Mhz
64b, 66Mhz
64b, 33Mhz
32b, 66Mhz
32b, 33Mhz
32b, 167Mhz
32b, 133Mhz
32b, 83Mhz
32b, 66Mhz
32b, 33Mhz
MII
GMII or TBI
RGMII or RTBI
MII
RMII
HDLC 16 Mbps
GVDD OVDD LVDD LVDD
(2.5V) (3.3V) (3.3V) (2.5V)
0.46
0.59
0.66
0.73
0.14
0.08
0.07
0.04
0.30
0.24
0.16
0.13
0.07
0.01
0.07
0.04
0.015
0.013
0.009
Unit
Comments
W—
W—
W—
W—
W—
W—
W Multiply by 2 if using two 32b ports
W
W—
W—
W
W—
W—
W Multiply by number of interfaces
used.
W
W
W—
W—
W—
MPC8541E PowerQUICC™ III Integrated Communications Processor Hardware Specifications, Rev. 4
12
Freescale Semiconductor

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