MPC8541E 查看數據表（PDF） - Freescale Semiconductor

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MPC8541E

PowerQUICC™ III Integrated Communications Processor Hardware Specification

Freescale Semiconductor 

Power Characteristics

3 Power Characteristics

The estimated typical power dissipation for this family of PowerQUICC III devices is shown in Table 4.

Table 4. Power Dissipation(1) (2)

CCB Frequency (MHz) Core Frequency (MHz)

VDD

Typical Power(3)(4) (W) Maximum Power(5) (W)

200

400

1.2

4.4

6.1

500

1.2

4.7

6.5

600

1.2

5.0

6.8

267

533

1.2

4.9

6.7

667

1.2

5.4

7.2

800

1.2

5.8

8.6

333

667

1.2

5.5

7.4

833

1.2

6.0

1000(6)

1.3

9.0

8.8

12.2

Notes:

1. The values do not include I/O supply power (OVDD, LVDD, GVDD) or AVDD.

2. Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site (board)

temperature, ambient temperature, air flow, power dissipation of other components on the board, and board thermal

resistance. Any customer design must take these considerations into account to ensure the maximum 105 degrees junction

temperature is not exceeded on this device.

3. Typical power is based on a nominal voltage of VDD = 1.2V, a nominal process, a junction temperature of Tj = 105° C, and a

Dhrystone 2.1 benchmark application.

4. Thermal solutions likely need to design to a value higher than Typical Power based on the end application, TA target, and I/O

power

5. Maximum power is based on a nominal voltage of VDD = 1.2V, worst case process, a junction temperature of Tj = 105° C, and

an artificial smoke test.

6. The nominal recommended VDD = 1.3V for this speed grade.

Notes:

1.

2.

3.

4.

5.

6.

MPC8541E PowerQUICC™ III Integrated Communications Processor Hardware Specification, Rev. 4.2

12

Freescale Semiconductor

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