IRFP140 查看數據表（PDF） - Inchange Semiconductor
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IRFP140 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP140
FEATURES
·Drain Current –ID= 31A@ TC=25℃
·Drain Source Voltage-
: VDSS= 100V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.077Ω(Max)
·SOA is power dissipation limited
DESCRIPTION
·Designed for application such as switching regulators,
switching convertors, motor drivers and so on.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
ID
Drain Current-Continuous
IDM
Drain Current-Single Pluse
PD
Total Dissipation @TC=25℃
TJ
Max. Operating Junction Temperature
Tstg
Storage Temperature
VALUE UNIT
100
V
±20
V
31
A
120
A
180
W
-55~175 ℃
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
Rth j-a Thermal Resistance, Junction to Ambient
MAX
0.83
30
UNIT
℃/W
℃/W
isc website：www.iscsemi.com
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