BSS 138
Maximum Ratings
Parameter
Symbol
Chip or operating temperature
Tj
Storage temperature
Tstg
Thermal resistance, chip to ambient air
RthJA
Therminal resistance, chip-substrate- reverse side 1)RthJSR
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Values
Unit
-55 ... + 150 °C
-55 ... + 150
≤ 350
K/W
≤ 285
E
55 / 150 / 56
1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
Unit
typ.
max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
VDS = 50 V, VGS = 0 V, Tj = 25 °C
VDS = 50 V, VGS = 0 V, Tj = 125 °C
VDS = 30 V, VGS = 0 V, Tj = 25 °C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
VGS = 10 V, ID = 0.22 A
VGS = 4.5 V, ID = 0.22 A
V(BR)DSS
50
VGS(th)
0.8
IDSS
-
-
-
IGSS
-
RDS(on)
-
-
V
-
-
1.2
1.6
0.05
0.5
µA
-
5
-
100
nA
nA
10
100
Ω
1.8
3.5
2.8
6
Semiconductor Group
2
Sep-13-1996