Q67000-S566 查看數據表（PDF） - Siemens AG
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Q67000-S566 Datasheet PDF : 8 Pages
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BSS 138
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs , Tj = 25 °C
0.50
A
Ptot = l0kj W
ih g f
ID 0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
VGS [V]
a
2.0
e
b
2.5
c
3.0
d
3.5
e
4.0
df
4.5
g
5.0
h
6.0
i
7.0
cj
8.0
k
9.0
l
10.0
b
a
0.00
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0
VDS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: tp = 80 µs, Tj = 25 °C
11
Ω
ab
c
d
e
9
RDS (on)
8
7
6
5
4
f
3
g
2
l
h
jk
i
VGS [V] =
1 abcdef
2.0 2.5 3.0 3.5 4.0 4.5
ghi j
5.0 6.0 7.0 8.0
kl
9.0 10.0
0
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 A 0.45
ID
Typ. transfer characteristics ID = f(VGS)
parameter: tp = 80 µs
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
0.65
A
0.55
ID 0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0 1 2 3 4 5 6 7 8 V 10
VGS
Semiconductor Group
6
0.30
S
0.26
gfs 0.24
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0.00 0.10 0.20 0.30 0.40 A 0.55
ID
Sep-13-1996
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