Q67000-S566 查看數據表（PDF） - Siemens AG
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Q67000-S566 Datasheet PDF : 8 Pages
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BSS 138
Drain-source on-resistance
RDS (on) = ƒ(Tj)
parameter: ID = 0.22 A, VGS = 10 V
9
Ω
RDS (on) 7
6
5
98%
4
3
typ
2
1
0
-60
-20
20
60
100 °C 160
Tj
Gate threshold voltage
VGS (th) = ƒ(Tj)
parameter: VGS = VDS, ID = 1 mA
2.6
V
2.2
VGS(th) 2.0
1.8
98%
1.6
1.4
typ
1.2
1.0
2%
0.8
0.6
0.4
0.2
0.0
-60
-20
20
60
100 °C 160
Tj
Typ. capacitances
C = f (VDS)
parameter:VGS=0V, f = 1 MHz
10 3
Forward characteristics of reverse diode
IF = ƒ(VSD)
parameter: Tj, tp = 80 µs
10 0
pF
C
10 2
10 1
Ciss
Coss
Crss
10 0
0
5 10 15 20 25 30 V 40
VDS
Semiconductor Group
7
A
I
F
10 -1
10 -2
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 -3
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VSD
Sep-13-1996
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