2SB1386 查看數據表（PDF） - Willas Electronic Corp.
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2SB1386 Datasheet PDF : 3 Pages
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WILLAS
S1O.0TA -S8U9RFAPClEaMsOtiUcN-TESnCHcOaTpTKsYuBlAaRtReIERTrRaECnTsIFiIsERtSo-r2s0V- 200V
SOD-123+ PACKAGE
FM120-M+
2SB1386 THRU
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
O u t l i n e D r a w i n g • Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
.181(4.60)
Mechanical data
• Epoxy : UL94-V0 rated flame re.t1ar7d3a(n4t .39)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
.061REF
• Polarity : Indicated by cathode b(1an.5d 5)REF
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Package outline
S O T- 8 9 SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
.063(1.60)
.055(1.40)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.167(4.25)
RATINGS
Marking Code
.154(3.91)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
SYMBOL FM120-MH FM130-MH FM.11400-M2H(F2M.16500-M) H FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
12
13
.10491(2.1350) 16
18
10
115 120
VR.R0M23(02.50 8) 30
40
50
60
VR.M0S16(01.44 0) 21
28
35
42
VDC
20
30
40
50
60
80
100
150
200 Vo
56
70
105
140 Vo
80
100
150
200 Vo
Maximum Average Forward Rectified Current
IO
1.0
Am
Peak Forwa.rd0S4u7rg(e1C.u2rr)ent 8.3 ms single half sine-wave
superimpose.d0o3n1ra(t0ed.8loa)d (JEDEC method)
IFSM
30
Am
Typical Thermal Resistance (Note 2)
RΘJA
40
℃
Typical Junction Capacitance (Note 1)
CJ
120
P
Operating Temperature Range
TJ
-55 to +125
-55 to +150
℃
Storage Temperature Range
.060TYP
TSTG
.197(0.52)
- 65 to +175
℃
(1.50)TYP
.013(0.32)
.017(0.44)
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
.118TYSYPMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM.10810-M4H(0FM.311500)-MH FM1150-MH FM1200-MH UN
VF
0.50
0.70
0.85
0.9
0.92 Vo
Maximum Average Reverse Current at
@T
A=(235℃.0
)
T
Y
P
IR
Rated DC Blocking Voltage
@T A=125℃
0.5
mA
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
Dimensions in inches and (millimeters)
WILLAS ELECTRReOvN.CIC CORP.
WILLAS ELECTRONIC CORP.
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