FQB11N40 查看數據表（PDF） - Fairchild Semiconductor
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FQB11N40 Datasheet PDF : 9 Pages
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Typical Characteristics
VGS
Top : 15 V
10 V
8.0 V
7.0 V
101
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
VDS , Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
VGS = 10V
V = 20V
GS
※ Note : TJ = 25℃
5
10
15
20
25
30
35
40
ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2400
1800
1200
600
C
iss
C
oss
C
rss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
100
10-1
2
150℃
25℃
-55℃
※ Notes :
1. V =40V
2. 25DS0μ s Pulse Test
4
6
8
10
VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
150℃ 25℃
※ Notes :
1. V =0V
2. 25G0Sμ s Pulse Test
10-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = 80V
DS
10
V = 200V
DS
V = 320V
DS
8
6
4
2
※ Note : ID = 11.4 A
0
0
5
10
15
20
25
30
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001
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