STTH3003CW 查看數據表（PDF） - STMicroelectronics
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STTH3003CW Datasheet PDF : 5 Pages
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STTH3003CW
Fig. 7: Relative variation of dynamic parameters
versus junction temperature (reference: Tj = 125°C).
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
S factor
IRM
Tj(°C)
50
75
100
125
Fig. 8: Transient peak forward voltage versus
dIF/dt (90% confidence, per diode).
VFP(V)
8
7
IF=IF(av)
Tj=125°C
6
5
4
3
2
1
dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
Fig. 9: Forward recovery time versus dIF/dt (90%
confidence, per diode).
tfr(ns)
500
450
400
350
300
250
200
150
100
50
0
0 50
VFR=1.1*VF max.
IF=IF(av)
Tj=125°C
dIF/dt(A/µs)
100 150 200 250 300 350 400 450 500
4/5
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