BTS113 查看數據表（PDF） - Siemens AG

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BTS113

TEMPFET®

Siemens AG 

Drain-source on-state resistance

RDS(on) = f (Tj)

Parameter: ID = – 5 A, VGS = 4.5 V

BTS 113A

Gate threshold voltage VGS(th) = f (Tj)

Parameter: VDS = VGS, ID = – 1 mA

Typ. transfer characteristic

ID = f (VGS)

Parameter: tp = 80 µs, VDS = – 25 V

Typ. transconductance gfs = f (ID)

Parameter: tp = 80 µs, VDS = – 25 V

Semiconductor Group

6

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