ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 4. Static Electrical Characteristics (continued)
Characteristics noted under conditions of 3.0V ≤ VDD ≤ 5.5V, 8.0V ≤ VPWR ≤ 28V, -40°C ≤ TC ≤ 125°C, unless otherwise
noted. Where applicable, typical values reflect the parameter’s approximate average value with VPWR = 13V, TA = 25°C.
Characteristic
Symbol
Min
Typ
Max
Unit
DIGITAL INTERFACE
Input Logic High-Voltage Thresholds(11)
Input Logic Low-Voltage Thresholds(11)
SCLK, SI, Tri-State SO Input Current
0.0 V to VDD
VIH
0.7 x VDD
–
VDD + 0.3
V
VIL
GND - 0.3
–
0.2 x VDD
V
ISCLK, ISI,
μA
ISO(TRI)
-10
–
10
CS Input Current
CS = VDD
ICS
μA
-10
–
10
CS Pull-Up Current
CS = 0.0V
ICS
μA
30
–
100
SO High-State Output Voltage
ISO(HIGH) = -200μA
VSO(HIGH)
VDD - 0.8
–
V
VDD
SO Low-State Output Voltage
ISO(HIGH) = 1.6mA
Input Capacitance on SCLK, SI, Tri-State SO(12)
INT Internal Pull-Up Current
VSO(LOW)
–
CIN
–
–
15
V
–
0.4
–
20
pF
40
100
μA
INT Voltage
INT = Open Circuit
V INT (HIGH)
VDD - 0.5
–
V
VDD
INT Voltage
IINT = 1.0mA
V INT (LOW)
–
V
0.2
0.4
WAKE Internal Pull-Up Current
WAKE Voltage
WAKE = Open Circuit
I WAKE (PU)
20
40
100
μA
V WAKE (HIGH)
V
4.0
4.3
5.3
WAKE Voltage
IWAKE = 1.0mA
WAKE Voltage(12)
Maximum Voltage Applied to WAKE Through External Pull-Up
V WAKE(LOW)
–
V WAKE(MAX)
–
V
0.2
0.4
V
–
40
Notes
11. Upper and lower logic threshold voltage levels apply to SI, CS, and SCLK.
12. This parameter is guaranteed by design however, is not production tested.
Analog Integrated Circuit Device Data
Freescale Semiconductor
33975
9