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SST211 查看數據表(PDF) - Temic Semiconductors

零件编号
产品描述 (功能)
生产厂家
SST211
Temic
Temic Semiconductors Temic
SST211 Datasheet PDF : 6 Pages
1 2 3 4 5 6
SD211DE/SST211 Series
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
GateĆDrain, GateĆSource Voltage (SD211DE/SST211) -30/25 V
(SD213DE/SST213) -15/25 V
(SD215DE/SST215) -25/30 V
GateĆSubstrate Voltagea (SD211DE/SST211) . . . . . . . . -0.3/25 V
(SD213DE/SST213) . . . . . . . -0.3/25 V
(SD215DE/SST215) . . . . . . . -0.3/30 V
DrainĆSource Voltage
(SD211DE/SST211) . . . . . . . . . . . . 30 V
(SD213DE/SST213) . . . . . . . . . . . 10 V
(SD215DE/SST215) . . . . . . . . . . . 20 V
SourceĆDrain Voltage
(SD211DE/SST211) . . . . . . . . . . . . 10 V
(SD213DE/SST213) . . . . . . . . . . . 10 V
(SD215DE/SST215) . . . . . . . . . . . 20 V
DrainĆSubstrate Voltage (SD211DE/SST211) . . . . . . . . . . . . 30 V
(SD213DE/SST213) . . . . . . . . . . . 15 V
(SD215DE/SST215) . . . . . . . . . . . 25 V
SourceĆSubstrate Voltage (SD211DE/SST211) . . . . . . . . . . . . 15 V
(SD213DE/SST213) . . . . . . . . . . . 15 V
(SD215DE/SST215) . . . . . . . . . . . 25 V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Lead Temperature (1/16” from case for 10 seconds) . . . . . . . . . 300_C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . –55 to 125_C
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW
Notes:
a. Derate 3 mW/_C above 25_C
Specificationsa
Parameter
Static
Drain-Source
Breakdown Voltage
Source-Drain
Breakdown Voltage
Drain-Substrate
Breakdown Voltage
Source-Substrate
Breakdown Voltage
Drain-Source
Leakage
Source-Drain
Leakage
Gate Leakage
Threshold Voltage
Symbolb
V(BR)DS
V(BR)SD
V(BR)DBO
V(BR)SBO
IDS(off)
ISD(off)
IGBS
VGS(th)
Drain-Source
On-Resistance
rDS(on)
2
Test Conditionsb
Limits
211 Series 213 Series 215 Series
Typc Min Max Min Max Min Max Unit
VGS = VBS = 0 V, ID = 10 mA
35 30
VGS = VBS = –5 V, ID = 10 nA
30 10
10
20
VGD = VBD = –5 V, IS = 10 nA
22 10
10
20
V
VGB = 0 V, ID = 10 nA,
Source Open
35 15
15
25
VGB = 0 V, IS = 10 mA,
Drain Open
35 15
15
25
VDS = 10 V 0.4
10
10
VGS = VBS = –5 V VDS = 20 V 0.9
10
VSD = 10 V 0.5
10
10
nA
VGD = VBD = –5 V VSD = 20 V
1
10
VDB = VSB = 0 V, VGB = 30V
VDS = VGS, ID = 1 mA
VSB = 0 V
0.01
100
100
100
0.8 0.5 1.5 0.1 1.5 0.1 1.5 V
VGS = 5 V
(SD Series)
58
70
70
70
VGS = 5 V
(SST
60
75
75
75
Series)
VSB = 0 V
ID = 1 mA
VGS = 10 V
(SD Series)
38
VGS = 10 V
45
45
45
W
(SST
40
50
50
50
Series)
VGS = 15 V 30
VGS = 20 V 26
VGS = 25 V 24
Siliconix
S-51850—Rev. F, 14-Apr-97

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