FGH80N60FD 查看數據表（PDF） - Fairchild Semiconductor
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FGH80N60FD Datasheet PDF : 9 Pages
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FGH80N60FD
600 V Field Stop IGBT
Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A
• High Input Impedance
• Fast Switching
• RoHS Complaint
Applications
• Induction Heating, PFC, Telecom, ESS
E
C
G
March 2013
General Description
Using novel field stop IGBT technology, Fairchild®'s field stop
IGBTs offer the optimum performance for induction heating,
telecom, ESS and PFC applications where low conduction and
switching losses are essential.
C
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
Description
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25C
@ TC = 100C
@ TC = 25C
@ TC = 25C
@ TC = 100C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(Diode)
RJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
E
Ratings
600
20
80
40
160
290
116
-55 to +150
-55 to +150
300
Typ.
--
--
Max.
0.43
1.5
40
Unit
V
V
A
A
A
W
W
C
C
C
Unit
C/W
C/W
C/W
©2007 Fairchild Semiconductor Corporation
1
FGH80N60FD Rev. C1
www.fairchildsemi.com
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