BD540 查看數據表（PDF） - Inchange Semiconductor

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BD540

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

BD540

DESCRIPTION

·DC Current Gain -

: hFE = 40(Min.)@ IC= -0.5A

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -40V(Min)

·Complement to Type BD539

APPLICATIONS

·Designed for use in medium power linear and switching

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-40

V

VCEO

VEBO

IC

PC

TJ

Tstg

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Power Dissipation

@ Ta=25℃

Collector Power Dissipation

@ TC=25℃

Junction Temperature

Storage Temperature Range

-40

V

-5

V

-5

A

2

W

45

150

℃

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c

Rth j-a

Thermal Resistance, Junction to Case

2.78 ℃/W

Thermal Resistance, Junction to Ambient 62.5 ℃/W

isc Website：www.iscsemi.cn

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