IRF830S 查看數據表（PDF） - KEXIN Industrial
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IRF830S Datasheet PDF : 6 Pages
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SMD Type
MOSFET
N-Channel MOSFET
IRF830S (KRF830S)
■ Typical Characterisitics
L
V DS
Vary tp to obtain
tp
required IAS
Rg
10 V
tp
D.U.T.
IAS
0.01 Ω
+
- V DD V DS
IAS
VDS
V DD
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
600
ID
Top
2.0 A
QG
500
2.8 A
10 V
Bottom 4.5 A
400
Q GS
Q GD
300
200
100
0 V DD = 50 V
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
VG
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - V DS
V GS
3 mA
IG
ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
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