MMBF4391LT1G(2004) 查看數據表（PDF） - ON Semiconductor
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MMBF4391LT1G Datasheet PDF : 6 Pages
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MMBF4391LT1, MMBF4392LT1, MMBF4393LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage
(IG = 1.0 mAdc, VDS = 0)
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0, TA = 25°C)
(VGS = 15 Vdc, VDS = 0, TA = 100°C)
Gate−Source Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
MMBF4391LT1
MMBF4392LT1
MMBF4393LT1
Off−State Drain Current
(VDS = 15 Vdc, VGS = −12 Vdc)
(VDS = 15 Vdc, VGS = −12 Vdc, TA = 100°C)
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current
(VDS = 15 Vdc, VGS = 0)
MMBF4391LT1
MMBF4392LT1
MMBF4393LT1
Drain−Source On−Voltage
(ID = 12 mAdc, VGS = 0)
(ID = 6.0 mAdc, VGS = 0)
(ID = 3.0 mAdc, VGS = 0)
Static Drain−Source On−Resistance
(ID = 1.0 mAdc, VGS = 0)
MMBF4391LT1
MMBF4392LT1
MMBF4393LT1
MMBF4391LT1
MMBF4392LT1
MMBF4393LT1
SMALL−SIGNAL CHARACTERISTICS
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 0, VGS = 12 Vdc, f = 1.0 MHz)
Symbol
V(BR)GSS
IGSS
VGS(off)
ID(off)
IDSS
VDS(on)
rDS(on)
Ciss
Crss
Min
30
−
−
−4.0
−2.0
−0.5
−
−
50
25
5.0
−
−
−
−
−
−
−
−
Max
−
1.0
0.20
−10
−5.0
−3.0
1.0
1.0
150
75
30
0.4
0.4
0.4
30
60
100
14
3.5
Unit
Vdc
nAdc
mAdc
Vdc
nAdc
mAdc
mAdc
Vdc
W
pF
pF
ORDERING INFORMATION
Device
MMBF4391LT1
Marking
6J
Package
SOT−23
Shipping†
MMBF4391LT1G
6J
SOT−23
(Pb−Free)
MMBF4392LT1
MMBF4393LT1
6K
SOT−23
6G
SOT−23
3000 / Tape & Reel
MMBF4393LT1G
6G
SOT−23
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
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