BC559 查看數據表（PDF） - ON Semiconductor

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BC559

Low Noise Transistors

ON Semiconductor 

Low Noise Transistors

PNP Silicon

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

Total Device Dissipation @ TA = 25°C

Derate above 25°C

Total Device Dissipation @ TC = 25°C

Derate above 25°C

Operating and Storage Junction

Temperature Range

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

Symbol

VCEO

VCBO

VEBO

IC

PD

PD

TJ, Tstg

Symbol

RqJA

RqJC

BC559 BC560 Unit

–30

–45

Vdc

–30

–50

Vdc

–5.0

Vdc

–100

mAdc

625

mW

5.0

mW/°C

1.5

Watt

12

mW/°C

–55 to +150

°C

Max

Unit

200

°C/W

83.3

°C/W

BC559, B, C

BC560C

1

2

3

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

COLLECTOR

1

2

BASE

3

EMITTER

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = –10 mAdc, IB = 0)

BC559

BC560

V(BR)CEO

–30

—

–45

—

Vdc

—

—

Collector–Base Breakdown Voltage

(IC = –10 µAdc, IE = 0)

BC559

BC560

V(BR)CBO

–30

—

–50

—

Vdc

—

—

Emitter–Base Breakdown Voltage

(IE = –10 mAdc, IC = 0)

Collector Cutoff Current

(VCB = –30 Vdc, IE = 0)

(VCB = –30 Vdc, IE = 0, TA = +125°C)

Emitter Cutoff Current

(VEB = –4.0 Vdc, IC = 0)

V(BR)EBO

–5.0

—

—

Vdc

ICBO

—

—

–15

nAdc

—

—

–5.0

µAdc

IEBO

—

—

–15

nAdc

© Semiconductor Components Industries, LLC, 2001

1

February, 2001 – Rev. 2

Publication Order Number:

BC559/D

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