DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

BGD802N 查看數據表(PDF) - Philips Electronics

零件编号
产品描述 (功能)
生产厂家
BGD802N
Philips
Philips Electronics Philips
BGD802N Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Philips Semiconductors
CATV amplifier module
Product specification
BGD802N
CHARACTERISTICS
Table 1 Bandwidth 40 to 860 MHz; VB = 24 V; Tcase = 35 °C; ZS = ZL = 75
SYMBOL
PARAMETER
Gp
power gain
SL
slope cable equivalent
FL
flatness of frequency response
S11
input return losses
S22
output return losses
S21
CTB
Xmod
CSO
d2
Vo
F
phase response
composite triple beat
cross modulation
composite second order
distortion
second order distortion
output voltage
noise figure
Itot
total current consumption (DC)
CONDITIONS
f = 50 MHz
f = 860 MHz
f = 40 to 860 MHz
f = 40 to 860 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 860 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 860 MHz
f = 50 MHz
49 channels flat; Vo = 47 dBmV;
measured at 859.25 MHz
49 channels flat; Vo = 47 dBmV;
measured at 55.25 MHz
49 channels flat; Vo = 47 dBmV;
measured at 860.5 MHz
note 1
dim = 60 dB; note 2
f = 50 MHz
f = 550 MHz
f = 650 MHz
f = 750 MHz
f = 860 MHz
note 3
MIN.
18
18.5
0.2
20
18.5
17
15.5
14
20
18.5
17
45
TYP.
18.5
19.5
0.9
±0.1
32
27
24
22
20.5
33
29
22
65
MAX.
19
2
±0.25
+45
63
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
64 62 dB
68 60 dB
75 69
61.5 63.5
4.5 5.5
6
7
7.5
6.5 9
395 410
dB
dBmV
dB
dB
dB
dB
dB
mA
Notes
1. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 805.25 MHz; Vq = 44 dBmV;
measured at fp + fq = 860.5 MHz.
2. Measured according to DIN45004B:
fp = 851.25 MHz; Vp = Vo;
fq = 858.25 MHz; Vq = Vo 6 dB;
fr = 860.25 MHz; Vr = Vo 6 dB;
measured at fp + fq fr = 849.25 MHz.
3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
1999 Mar 22
3

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]