DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

BGD802N 查看數據表(PDF) - Philips Electronics

零件编号
产品描述 (功能)
生产厂家
BGD802N
Philips
Philips Electronics Philips
BGD802N Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Philips Semiconductors
CATV amplifier module
Product specification
BGD802N
Table 4 Bandwidth 40 to 650 MHz; VB = 24 V; Tcase = 30 °C; ZS = ZL = 75
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Gp
SL
FL
S11
S22
S21
CTB
Xmod
CSO
d2
Vo
F
Itot
power gain
slope cable equivalent
flatness of frequency response
input return losses
output return losses
phase response
composite triple beat
cross modulation
composite second order
distortion
second order distortion
output voltage
noise figure
total current consumption (DC)
f = 50 MHz
f = 650 MHz
f = 40 to 650 MHz
f = 40 to 650 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 650 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 650 MHz
f = 50 MHz
94 channels flat; Vo = 44 dBmV;
measured at 649.25 MHz
94 channels flat; Vo = 44 dBmV;
measured at 55.25 MHz
94 channels flat; Vo = 44 dBmV;
measured at 650.5 MHz
note 1
dim = 60 dB; note 2
see Table 1
note 3
18
18.5 19
dB
18.5
dB
0.2
2
dB
±0.2 dB
20
32
dB
18.5 27
dB
17
24
dB
15
22
dB
20
33
dB
18.5 29
dB
17
22
dB
45
+45 deg
61 dB
61 dB
62 dB
72 dB
65
dBmV
dB
395 410 mA
Notes
1. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 595.25 MHz; Vq = 44 dBmV;
measured at fp + fq = 650.5 MHz.
2. Measured according to DIN45004B:
fp = 640.25 MHz; Vp = Vo;
fq = 647.25 MHz; Vq = Vo 6 dB;
fr = 649.25 MHz; Vr = Vo 6 dB;
measured at fp + fq fr = 638.25 MHz.
3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
1999 Mar 22
6

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]