AM29LV004 查看數據表（PDF） - Advanced Micro Devices

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AM29LV004

4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

Advanced Micro Devices 

PRELIMINARY

DC CHARACTERISTICS

CMOS Compatible

Parameter

Description

Test Conditions

Min

Typ

Max

Unit

ILI

Input Load Current

ILIT

A9 Input Load Current

ILO

Output Leakage Current

ICC1

VCC Active Read Current

(Note 1)

VIN = VSS to VCC,

VCC = VCC max

VCC = VCC max; A9 = 12.5 V

VOUT = VSS to VCC,

VCC = VCC max

5 MHz

CE# = VIL, OE# = VIH

1 MHz

±1.0

µA

35

µA

±1.0

µA

10

16

mA

2

4

ICC2

VCC Active Write Current

(Notes 2 and 4)

CE# = VIL, OE# = VIH

20

30

mA

ICC3

ICC4

ICC5

VIL

VIH

VID

VCC Standby Current

VCC = VCC max;

CE#, RESET# = VCC±0.3 V

VCC Standby Current During Reset

VCC = VCC max;

RESET# = VSS ± 0.3 V

Automatic Sleep Mode (Note 3)

VIH = VCC ± 0.3 V;

VIL = VSS ± 0.3 V

Input Low Voltage

Input High Voltage

Voltage for Autoselect and

Temporary Sector Unprotect

VCC = 3.3 V

0.2

5

µA

0.2

5

µA

0.2

5

µA

–0.5

0.7 x VCC

11.5

0.8

V

VCC + 0.3 V

12.5

V

VOL

VOH1

VOH2

VLKO

Output Low Voltage

Output High Voltage

Low VCC Lock-Out Voltage (Note

4)

IOL = 4.0 mA, VCC = VCC min

IOH = –2.0 mA, VCC = VCC min

IOH = –100 µA, VCC = VCC min

0.85 VCC

VCC–0.4

2.3

0.45

V

V

2.5

V

Notes:

1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH. Typical VCC is 3.0 V.

2. ICC active while Embedded Erase or Embedded Program is in progress.

3. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns.

4. Not 100% tested.

Am29LV004

21

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