DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
100 VGS = −2.5 V
90
TA = 125˚C
75˚C
80
25˚C
70
−25˚C
60
−0.01
−0.1
−1
−10
ID - Drain Current - A
−100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
80
VGS = −4.5 V
TA = 125˚C
60
75˚C
25˚C
40
−25˚C
20
−0.01
−0.1
−1
−10
ID - Drain Current - A
−100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
120
ID = −1.5 A
100
80
60
40
20
0
−2
−4
−6
−8
−10
VGS - Gate to Source Voltage - V
µ PA1854
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
90
VGS = −4.0 V
70
TA = 125˚C
75˚C
50
25˚C
−25˚C
30
−0.01
−0.1
−1
−10
ID - Drain Current - A
−100
DRAIN TO SOURCE ON STATE RESISTANCE vs.
CHANNEL TEMPERATURE
100
ID = −1.5 A
VGS = −2.5 V
80
−4.0 V
60
−4.5 V
40
20
−50
0
50
100
150
Tch - Channel Temperature -˚C
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
f = 1 MHz
1000
100
Ciss
Coss
Crss
10
−0.1
−1
−10
VDS - Drain to Source Voltage - V
−100
4
Data Sheet D13295EJ1V0DS00