MGP14N60E 查看數據表（PDF） - Motorola => Freescale
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MGP14N60E Datasheet PDF : 6 Pages
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MGP14N60E
0.8
TJ = 125°C
VDD = 360 V
VGE = 15 V
0.6
IC = 10 A
IC = 7.5 A
0.4
IC = 5.0 A
0.2
5.0
15
25
35
45
RG, GATE RESISTANCE (OHMS)
Figure 7. Turn–Off Losses versus
Gate Resistance
1.0
TJ = 125°C
0.8
VCC = 360 V
W VGE = 15 V
RG = 20
0.6
0.4
0.2
0
0
5.0
10
15
IC, COLLECTOR–TO–EMITTER CURRENT (AMPS)
Figure 9. Turn–Off Losses versus
Collector–To–Emitter Current
0.8
VCC = 360 V
0.6
W VGE = 15 V
RG = 20
0.4
0.2
IC = 10 A
IC = 7.5 A
IC = 5.0 A
0
–50 –25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. Turn–Off Losses versus
Junction Temperature
100
10
W TJ = 125°C
RGE = 20
VGE = 15 V
1.0
1.0
10
100
1000
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 10. Reverse Biased Safe
Operating Area
4
Motorola TMOS Power MOSFET Transistor Device Data
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