MWI50-12A7 查看數據表（PDF） - IXYS CORPORATION

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产品描述 (功能)

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MWI50-12A7

IGBT Modules Sixpack

IXYS CORPORATION 

MWI 50-12 A7

MWI 50-12 A7T

Diodes

Symbol

IF25

IF80

Conditions

TC = 25°C

TC = 80°C

Maximum Ratings

110

A

70

A

Equivalent Circuits for Simulation

Conduction

Symbol

VF

IRM

trr

R

thJC

Conditions

IF = 50 A; VGE = 0 V; TVJ = 25°C

TVJ = 125°C

IF = 50 A; diF/dt = -400 A/µs; TVJ = 125°C

VR = 600 V; VGE = 0 V

(per diode)

Characteristic Values

min. typ. max.

2.2 2.6 V

1.6 1.8 V

40

A

200

ns

0.61 K/W

IGBT (typ. at VGE = 15 V; TJ = 125°C)

V0 = 1.5 V; R0 = 20.7 mW

Free Wheeling Diode (typ. at TJ = 125°C)

V0 = 1.3 V; R0 = 11.3 mW

Thermal Response

Temperature Sensor NTC (MWI ... A7T version only)

Symbol

Conditions

R25

B25/50

Module

Symbol

TVJ

Tstg

V

ISOL

Md

Symbol

T = 25°C

Conditions

I

ISOL

£

1

mA;

50/60

Hz

Mounting torque (M5)

Conditions

R

pin-chip

d

S

dA

RthCH

Weight

Creepage distance on surface

Strike distance in air

with heatsink compound

Characteristic Values

min. typ. max.

4.75 5.0 5.25 kW

3375

K

Maximum Ratings

-40...+150

°C

-40...+125

°C

2500

V~

2.7 - 3.3

Nm

IGBT (typ.)

Cth1 = 0.22 J/K; Rth1 = 0.26 K/W

Cth2 = 1.74 J/K; Rth2 = 0.09 K/W

Free Wheeling Diode (typ.)

Cth1 = 0.16 J/K; Rth1 = 0.483 K/W

Cth2 = 1.37 J/K; Rth2 = 0.127 K/W

Dimensions in mm (1 mm = 0.0394")

Characteristic Values

min. typ. max.

5

mW

6

mm

6

mm

0.02

K/W

180

g

© 2000 IXYS All rights reserved

Higher magnification see outlines.pdf

2-4

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