FQU2N60C 查看數據表（PDF） - Fairchild Semiconductor
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FQU2N60C Datasheet PDF : 10 Pages
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
※Notes :
1. VGS = 0 V
2. ID= 250μA
0.8
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
101
100
10-1
10-2
100
Operation in This Area
is Limited by R DS(on)
100 μs
1 ms
10 ms
100 ms
DC
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101
102
103
VDS, Drain-Source Voltage [V]
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. VGS = 10 V
2. ID = 0.95 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 10. Maximum Drain Current
vs. Case Temperature
2.0
1.6
1.2
0.8
0.4
0.0
25
50
75
100
125
150
TC, Case Temperature [℃]
Figure 11. Transient Thermal Response Curve
D =0.5
100
0 .2
0 .1
0.0 5
1 0 -1
0 .0 2
0 .0 1
sin gle p ulse
※ N otes :
1. Zθ JC(t) = 2.87 ℃ /W M ax.
2. D uty Factor, D =t1/t2
3. TJM - T C = P DM * Z θ JC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S quare W ave P ulse D uration [sec]
©2003 Fairchild Semiconductor Corporation
4
FQD2N60C / FQU2N60C Rev.1.4
www.fairchildsemi.com
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