NRVBB2535CTLT4G 查看數據表（PDF） - ON Semiconductor
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NRVBB2535CTLT4G Datasheet PDF : 5 Pages
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MBRB2535CTLG, NRVBB2535CTLG
MAXIMUM RATINGS (Per Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
35
V
VRWM
VR
Average Rectified Forward Current, (Rated VR, TC = 110C)
IF(AV)
12.5
A
Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 90C)
IFRM
25
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
A
150
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
IRRM
1.0
A
Storage Temperature Range
Tstg
−65 to +150
C
Operating Junction Temperature
TJ
−65 to +125
C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS (Per Leg)
Characteristic
Thermal Resistance
Junction−to−Case
Junction−to−Ambient (Note 1)
1. When mounted using minimum recommended pad size on FR−4 board.
Symbol
RqJC
RqJA
Value
1.0
84
Unit
C/W
ELECTRICAL CHARACTERISTICS (Per Leg)
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 25 A, TJ = 25C)
(iF = 12.5 A, TJ = 125C)
(iF = 12.5 A, TJ = 25C)
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ = 125C)
(Rated dc Voltage, TJ = 25C)
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
Symbol
Value
Unit
vF
V
0.55
0.41
0.47
IR
mA
500
10
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