TSTS7302 查看數據表（PDF） - Vishay Semiconductors
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TSTS7302 Datasheet PDF : 6 Pages
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VISHAY
TSTS730.
Vishay Semiconductors
GaAs IR Emitting Diodes in Hermetically Sealed TO-18 Case
Description
The TSTS730. series are infrared emitting diodes in
standard GaAs technology in a hermetically sealed
TO-18 package. Their glass lenses provide a high
radiant intensity without external optics.
Features
• High radiant intensity
• Suitable for pulse operation
• Angle of half intensity ϕ = ± 12°
• Peak wavelength λp = 950 nm
• High reliability
• Good spectral matching to Si photodetectors
• Lead-free device
948642
Applications
Radiation source in near infrared range
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse Voltage
Forward current
Peak Forward Current
Surge Forward Current
Power Dissipation
Tcase ≤ 25 °C
tp/T = 0.5, tp ≤ 100 µs,
Tcase ≤ 25 °C
tp ≤ 100 µs
Junction Temperature
Tcase ≤ 25 °C
Storage Temperature Range
Thermal Resistance Junction/
Ambient
Thermal Resistance Junction/
Case
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward Voltage
IF = 100 mA, tp ≤ 20 ms
Breakdown Voltage
IR = 100 µA
Junction capacitance
VR = 0 V, f = 1 MHz, E = 0
Symbol
Value
Unit
VR
5
V
IF
250
mA
IFM
500
mA
IFSM
PV
PV
Tj
Tstg
RthJA
RthJC
2.5
170
500
100
- 55 to + 100
450
150
A
mW
mW
°C
°C
K/W
K/W
Symbol
Min
Typ.
Max
Unit
VF
1.3
1.7
V
V(BR)
5
V
Cj
30
pF
Document Number 81048
Rev. 1.4, 11-May-04
www.vishay.com
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