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TSTS7302 查看數據表(PDF) - Vishay Semiconductors

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TSTS7302 Datasheet PDF : 6 Pages
1 2 3 4 5 6
TSTS730.
Vishay Semiconductors
Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Radiant Power
IF = 100 mA, tp 20 ms
Temp. Coefficient of φe
IF = 100 mA
Angle of Half Intensity
Peak Wavelength
IF = 100 mA
Spectral Bandwidth
IF = 100 mA
Rise Time
IF = 1.5 A, tp/T = 0.01, tp 10 µs
Fall Time
IF = 1.5 A, tp/T = 0.01, tp 10 µs
Virtual Source Diameter
Symbol
φe
TKφe
ϕ
λp
∆λ
tr
tf
VISHAY
Min
Typ.
Max
Unit
7
mW
- 0.8
%/K
± 12
deg
950
nm
50
nm
400
ns
400
ns
1
mm
Type Dedicated Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Radiant Intensity
IF = 100 mA, tp = 20 ms
Part
Symbol Min
Typ.
Max
Unit
TSTS7300
Ie
4
6.3
20
mW/sr
TSTS7301
Ie
6.3
10
12.5 mW/sr
TSTS7302
Ie
10
16
20
mW/sr
TSTS7303
Ie
16
25
32
mW/sr
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
600
RthJC
500
400
300
200
RthJA
100
0
0
94 8017
25
50
75 100 125
Tamb - Ambient Temperature ( °C )
Figure 1. Power Dissipation vs. Ambient Temperature
300
250
200
150
RthJA
100
RthJC
50
0
0
94 8018
20
40
60
80 100
Tamb – Ambient Temperature ( °C )
Figure 2. Forward Current vs. Ambient Temperature
www.vishay.com
2
Document Number 81048
Rev. 1.4, 11-May-04

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