BFR92P(2001) 查看數據表（PDF） - Infineon Technologies

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BFR92P
(Rev.:2001)

NPN Silicon RF Transistor

Infineon Technologies 

BFR92P

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

min. typ. max.

AC characteristics (verified by random sampling)

Transition frequency

fT

IC = 15 mA, VCE = 8 V, f = 500 MHz

Collector-base capacitance

Ccb

VCB = 10 V, f = 1 MHz

Collector-emitter capacitance

Cce

VCE = 10 V, f = 1 MHz

Emitter-base capacitance

Ceb

VEB = 0.5 V, f = 1 MHz

Noise figure

F

3.5 5

-

- 0.38 0.6

-

0.2

-

-

0.7

-

IC = 2 mA, VCE = 6 V, ZS = ZSopt ,

f = 900 MHz

-

1.8

-

f = 1.8 GHz

-

2.9

-

Power gain, maximum available F)

IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,

f = 900 MHz

Gma

-

15

-

f = 1.8 GHz

-

9.5

-

Transducer gain

IC = 15 mA, VCE = 8 V, ZS = ZL = 50 ,

f = 900 MHz

|S21e|2

- 12.5 -

IC = 15 mA, VCE = 8 V

-

7

-

Unit

GHz

pF

dB

1Gma = |S21 / S12| (k-(k2-1)1/2)

3

Aug-03-2001

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