CAT28C257 查看數據表（PDF） - ON Semiconductor
零件编号
产品描述 (功能)
生产厂家
CAT28C257 Datasheet PDF : 13 Pages
| |||
CAT28C257
Table 4. MODE SELECTION
Mode
CE
WE
OE
I/O
Power
Read
L
H
L
DOUT
ACTIVE
Byte Write (WE Controlled)
L
H
DIN
ACTIVE
Byte Write (CE Controlled)
L
H
DIN
ACTIVE
Standby and Write Inhibit
H
X
X
High−Z
STANDBY
Read and Write Inhibit
X
H
H
High−Z
ACTIVE
Table 5. CAPACITANCE (TA = 25°C, f = 1.0 MHz, VCC = 5 V)
Symbol
Test
Min
Typ
Max
Conditions
Units
CI/O (Note 7)
Input/Output Capacitance
10
VI/O = 0 V
pF
CIN (Note 7)
Input Capacitance
6
VIN = 0 V
pF
7. This parameter is tested initially and after a design or process change that affects the parameter.
Table 6. A.C. CHARACTERISTICS, READ CYCLE (VCC = 5 V ±10%, unless otherwise specified.)
28C257−12
28C257−15
Symbol
Parameter
Min
Typ
Max
Min
Typ
Max
Units
tRC
Read Cycle Time
120
150
ns
tCE
CE Access Time
120
150
ns
tAA
Address Access Time
120
150
ns
tOE
OE Access Time
50
70
ns
tLZ (Note 8)
CE Low to Active Output
0
0
ns
tOLZ (Note 8)
OE Low to Active Output
0
0
ns
tHZ (Notes 8, 9)
CE High to High−Z Output
50
50
ns
tOHZ (Notes 8, 9) OE High to High−Z Output
50
50
ns
tOH (Note 8)
Output Hold from Address Change
0
0
ns
8. This parameter is tested initially and after a design or process change that affects the parameter.
9. Output floating (High−Z) is defined as the state when the external data line is no longer driven by the output buffer.
Table 7. POWER−UP TIMING
Symbol
Parameter
Min
Typ
Max
Units
tPUR
tPUW
Power−Up to Read
Power−Up to Write
100
ms
5
10
ms
http://onsemi.com
4
Share Link: 