VS-30EPH03-N3 查看數據表（PDF） - Vishay Semiconductors
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VS-30EPH03-N3 Datasheet PDF : 7 Pages
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www.vishay.com
VS-30EPH03PbF, VS-30EPH03-N3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
-
-
Reverse recovery time
trr
TJ = 25 °C
-
38
TJ = 125 °C
-
52
Peak recovery current
TJ = 25 °C
IF = 30 A
-
2.8
IRRM
dIF/dt = - 200 A/μs
TJ = 125 °C
VR = 200 V
-
7.3
Reverse recovery charge
TJ = 25 °C
Qrr
TJ = 125 °C
-
53
-
190
MAX.
55
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
Thermal resistance,
junction to case per leg
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
TJ, TStg
RthJC
RthJA
RthCS
Typical socket mount
Mounting surface, flat, smooth and greased
Weight
Mounting torque
Marking device
Case style TO-247AC modified
MIN.
-65
-
-
-
-
-
6.0
(5.0)
TYP.
-
MAX.
175
UNITS
°C
0.5
0.9
-
40
°C/W
0.4
-
6.0
-
0.22
-
12
-
(10)
30EPH03
g
oz.
kgf · cm
(lbf in)
Revision: 09-Jul-15
2
Document Number: 94017
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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