M48T35MH(2011) 查看數據表（PDF） - STMicroelectronics
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M48T35MH Datasheet PDF : 28 Pages
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M48T35, M48T35Y
4
Maximum ratings
Maximum ratings
Stressing the device above the rating listed in the absolute maximum ratings table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Caution:
Caution:
Table 6. Absolute maximum ratings
Symbol
Parameter
Value
Unit
TA
Ambient operating temperature
Grade 1
0 to 70
°C
Grade 6
–40 to 85
°C
TSTG Storage temperature (VCC off, oscillator off)
TSLD(1)(2)(3) Lead solder temperature for 10 seconds
–40 to 85
°C
260
°C
VIO
Input or output voltages
M48T35
–0.3 to 7
V
M48T35Y
–0.3 to 7
V
VCC
Supply voltage
M48T35
–0.3 to 7
V
M48T35Y
–0.3 to 7
V
IO
Output current
PD
Power dissipation
20
mA
1
W
1. For DIP package, soldering temperature of the IC leads is to not exceed 260 °C for 10 seconds.
Furthermore, the devices shall not be exposed to IR reflow nor preheat cycles (as performed as part of
wave soldering). ST recommends the devices be hand-soldered or placed in sockets to avoid heat damage
to the batteries.
2. For DIP packaged devices, ultrasonic vibrations should not be used for post-solder cleaning to avoid
damaging the crystal.
3. For SOH28 package, lead-free (Pb-free) lead finish: reflow at peak temperature of 260 °C (the time above
255 °C must not exceed 30 seconds).
Negative undershoots below –0.3 V are not allowed on any pin while in the battery backup
mode.
Do NOT wave solder SOIC to avoid damaging SNAPHAT® sockets.
Doc ID 2611 Rev 10
17/28
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