M48T35MH(2011) 查看數據表（PDF） - STMicroelectronics
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M48T35MH Datasheet PDF : 28 Pages
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DC and AC parameters
M48T35, M48T35Y
Table 10. Power down/up AC characteristics
Symbol
Parameter(1)
Min
Max
Unit
tPD
E or W at VIH before power down
tF(2)
VPFD (max) to VPFD (min) VCC fall time
0
µs
300
µs
tFB(3)
VPFD (min) to VSS VCC fall time
M48T35
10
µs
M48T35Y
10
µs
tR
tRB
trec(4)
VPFD (min) to VPFD (max) VCC rise time
VSS to VPFD (min) VCC rise time
VPFD (max) to inputs recognized
10
µs
1
µs
40
200
ms
1. Valid for ambient operating temperature: TA = 0 to 70 or –40 to 85 °C; VCC = 4.75 to 5.5 V or 4.5 to 5.5 V (except where
noted).
2. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200 µs after
VCC passes VPFD (min).
3. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.
4. trec (min) = 20 ms for industrial temperature grade 6 device.
Table 11. Power down/up trip points DC characteristics
Symbol
Parameter(1)(2)
Min
Typ
Max
Unit
VPFD Power-fail deselect voltage
VSO Battery backup switchover voltage
tDR(3)(5) Expected data retention time
M48T35
M48T35Y
M48T35
M48T35Y
Grade 1
Grade 6
4.5
4.2
10(4)
10(5)
4.6
4.35
3.0
3.0
4.75
V
4.5
V
V
V
Years
Years
1. Valid for ambient operating temperature: TA = 0 to 70 or –40 to 85 °C; VCC = 4.75 to 5.5 V or 4.5 to 5.5 V (except where
noted).
2. All voltages referenced to VSS.
3. CAPHAT™ and M4T32-BR12SH1 SNAPHAT® only, M4T28-BR12SH1 SNAPHAT® top tDR = 7 years (typ).
4. Using larger M4T32-BR12SH6 SNAPHAT® top (recommended for industrial temperature range - grade 6 device).
5. At 25 °C, VCC = 0 V.
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Doc ID 2611 Rev 10
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