FDB5690 查看數據表（PDF） - Fairchild Semiconductor
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FDB5690 Datasheet PDF : 16 Pages
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Typical Characteristics
80
VGS = 10V
70
7.0V
6.0V
60
5.0V
50
40
4.5V
30
20
4.0V
10
0
0
2
4
6
8
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2.2
2
ID = 16A
VGS = 10V
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50 -25
0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation
with Temperature.
60
VDS = 5V
50
TA = -55oC 25oC
125oC
40
30
20
10
0
2
3
4
5
6
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.2
2
1.8 VGS = 4.0V
1.6
4.5V
1.4
5.0V
1.2
6.0V
7.0V 10V
1
0.8
0
20
40
60
80
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.06
ID = 16A
0.05
0.04
TA = 125oC
0.03
0.02
0.01
0
3
TA = 25oC
4
5
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDP5690/FDB5690 Rev. C
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