2SK1941 查看數據表（PDF） - Inchange Semiconductor
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2SK1941 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
isc Product Specification
2SK1941
SYMBOL
PARAMETER
CONDITIONS
MIN TYPE MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID=1mA
600
V
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VDS= VGS; ID=1mA
VGS= 10V; ID=8A
VGS=±30V;VDS= 0
VDS=600V; VGS= 0
2.5
3.5
V
0.37 0.55
Ω
±100 nA
500
µA
Ciss Input capacitance
3300 4950
Crss Reverse transfer capacitance
VDS=25V;VGS=0V;fT=1MHz
70
110
pF
Coss Output capacitance
310 470
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=18A;
VDD=300V;
RL=10Ω
70
110
35
55
ns
100 150
toff
Turn-off time
180 270
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