2SB1054 查看數據表（PDF） - Panasonic Corporation
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2SB1054 Datasheet PDF : 3 Pages
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Power Transistors
2SB1054
Silicon PNP triple diffusion planar type
For high power amplification
Complementary to 2SD1485
■ Features
• Excellent collector current IC characteristics of forward current
transfer ratio hFE
• Wide safe operation area
• High transition frequency fT
• Full-pack package which can be installed to the heat sink with one
screw
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
−100
V
Collector-emitter voltage (Base open) VCEO
−100
V
Emitter-base voltage (Collector open) VEBO
−5
V
Collector current
IC
−5
A
Peak collector current
ICP
−8
A
Collector power dissipation
PC
60
W
Ta = 25°C
3
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
15.0±0.3
11.0±0.2
Unit: mm
5.0±0.2
(3.2)
φ 3.2±0.1
2.0±0.2
1.1±0.1
2.0±0.1
0.6±0.2
5.45±0.3
10.9±0.5
123
1: Base
2: Collector
3: Emitter
EIAJ: SC-92
TOP-3F-A1 Package
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
VBE
ICBO
IEBO
hFE1
hFE2 *
hFE3
VCE(sat)
fT
Cob
Conditions
VCE = −5 V, IC = −3 A
VCB = −100 V, IE = 0
VEB = −3 V, IC = 0
VCE = −5 V, IC = −20 mA
VCE = −5 V, IC = −1 A
VCE = −5 V, IC = −3 A
IC = −3 A, IB = − 0.3 A
VCE = −5 V, IC = − 0.5 A, f = 1 MHz
VCB = −10 V, IE = 0, f = 1 MHz
Min Typ Max Unit
−1.8
V
−50 µA
−50 µA
20
40
200
20
−2.0
V
20
MHz
170
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
hFE2
40 to 80
60 to 120 100 to 200
Publication date: March 2003
SJD00038BED
1
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