2SB1530 查看數據表（PDF） - Renesas Electronics

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2SB1530

Silicon PNP Triple Diffused

Renesas Electronics 

2SB1530

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

Note: 1. Value at TC = 25°C.

Symbol

VCBO

VCEO

VEBO

IC

I C(peak)

PC

PC * 1

Tj

Tstg

Ratings

Unit

–200

V

–150

V

–6

V

–2

A

–5

A

1.5

W

20

150

°C

–45 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to emitter breakdown V(BR)CEO –150 —

voltage

Emitter to base breakdown

V(BR)EBO

–6

—

voltage

Collector cutoff current

I CBO

—

—

DC current transfer ratio

hFE1*1

60

—

hFE2

60

—

Collector to emitter saturation VCE(sat)

—

—

voltage

Base to emitter voltage

VBE

—

—

Notes: 1. The 2SB1530 is grouped by hFE1 as follows.

Max Unit

—

V

—

V

–1

µA

200

—

–3

V

–1

V

Test conditions

IC = –50 mA, RBE = ∞

IE = –5 mA, IC = 0

VCB = –120 V, IE = 0

VCE = –4 V, IC = –50 mA

VCE = –10 V, IC = –500 mA*2

IC = –500 mA, IB = –50 mA

ICE = –4 A, IC = –50 mA

B

60 to 120

C

100 to 200

2. Pulse test.

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