2SA1952 查看數據表（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd

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2SA1952

TO-252-2L Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-252-2L Plastic-Encapsulate Transistors

2SA1952 TRANSISTOR (PNP)

FEATURES

z -5A,-60V Middle Power Transistor

z Suitable for Middle Power Driver

z Complementary NPN Types:2SC5103

z Low Collector-emitter saturation voltage

APPLICATIONS

z Middle Power Driver

z LED Driver

z Power Supply

TO-252-2L

1. BASE

2. COLLECTOR

3. EMITTER

MARKING

A1952 = Device code

Solid dot = Green molding compound device,

if none, the normal device

XXX=Date Code

Front side

MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )

Parameter

Symbol

Limit

Unit

Collector-Base Voltage

Collector-Emitter Voltage

VCBO

-100

V

VCEO

-60

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

Collector Power Dissipation

IC

-5

A

PC (1)

1

W

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

(1). Mounted on a substrate

RθJA

Tj

Tstg

125

150

-55~+150

℃/W

℃

℃

www.cj-elec.com

1

C,Mar,2016

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